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| DG213 Vishay Siliconix Quad Complementary CMOS Analog Switch FEATURES D D D D D D D "22-V Supply Voltage Rating TTL and CMOS Compatible Logic Low On-Resistance--rDS(on): 45 W Low Leakage--ID(on): 20 pA Single Supply Operation Possible Extended Temperature Range Fast Switching--tON: 85 ns BENEFITS D D D D D D D Low Charge Injection--Q: 1 pC Wide Analog Signal Range Simple Logic Interface Higher Accuracy Minimum Transients Reduced Power Consumption Low Cost APPLICATIONS D D D D D D Industrial Instrumentation Test Equipment Communications Systems Computer Peripherals Portable Instruments Sample-and-Hold Circuits DESCRIPTION The versatile DG213 analog switch has two NC and two NO switches. It can be used in various configurations, including four single-pole single-throw (SPST), two single-pole double-throw (SPDT), one "T" switch, one DPDT, etc. This device is fabricated in a Vishay Siliconix' proprietary high-voltage silicon gate CMOS process, resulting in lower on-resistance, lower leakage, higher speed, and lower power consumption. injection compensation design minimizes switching transients. These switches can handle up to "22 V, and have an improved continuous current rating of 30 mA. An epitaxial layer prevents latchup. All switches feature true bi-directional performance in the on condition, and will block signals to the supply levels in the off condition. This analog switch was designed for a wide variety of general purpose applications in telecommunications, instrumentation, process control, computer peripherals, etc. An improved charge For additional information, please refer to Application Note AN208 (FaxBack document #70606). FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION TRUTH TABLE IN1 D1 S1 V- GND S4 D4 IN4 1 2 3 4 5 6 7 8 Top View Document Number: 70662 S-00787--Rev. F, 17-Apr-00 16 15 14 13 12 11 10 9 IN2 D2 S2 V+ VL S3 D3 IN3 Logic 0 1 SW1, SW4 OFF ON Logic "0" v 0.8 V Logic "1" w 2.4 V SW2, SW3 ON OFF ORDERING INFORMATION Temp Range Package 16-Pin Plastic DIP -40 to 85_C 40 16-Pin Narrow SOIC 16-Pin TSSOP Part Number DG213DJ DG213DY DG213DQ www.vishay.com S FaxBack 408-970-5600 4-1 DG213 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Voltages Referenced to V- V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V-) -2 V to (V+) +2 V or 30 mA, whichever occurs first Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D (Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 125_C Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW 16-Pin Narrow SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640 mW 16-Pin TSSOPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/_C above 75_C d. Derate 7.6 mW/_C above 75_C SPECIFICATIONS Test Conditions Unless Otherwise Specified Parameter Analog Switch Analog Signal Ranged Drain-Source On-Resistance rDS(on) Match Source Off Leakage Current Drain Off Leakage Current Drain On Leakage Current VANALOG rDS(on) DrDS(on) IS(off) ID(off) ID(on) VS = "14 V, VD = #14 V VD = "14 V, VS = #14 V VS = VD = 14 V VD = "10 V, IS = 1 mA , Full Room Full Room Room Full Room Full Room Full -0.5 -5 -0.5 -5 -0.5 -10 V- 45 1 "0.01 "0.01 "0.02 V+ 60 V D Suffix -40 to 85_C Symbol V+ = 15 V, V- = -15 V VL = 5 V, VIN = 2.4 V, 0.8 Ve Tempa Minc Typb Maxc Unit 85 2 0.5 5 0.5 5 0.5 10 W nA A Digital Control Input Voltage High Input Voltage Low Input Current Input Capacitance VINH VINL IINH or IINL CIN VINH or VINL Full Full Full Room -1 5 2.4 V 0.8 1 mA pF Dynamic Characteristics Turn-On Time Turn-Off Time Break-Before-Make Time Delay Charge Injection Source-Off Capacitance Drain-Off Capacitance Channel On Capacitance Off Isolation Channel-to-Channel Crosstalk tON tOFF tD Q CS(off) CD(off) CD(on) OIRR XTALK VS = 10 V See Figure 2 S Fi VS = 10 V, See Figure 3 CL = 1000 pF, Vg= 0 V, Rg = 0 W VS = 0 V, f = 1 MHz VD = VS = 0 V, f = 1 MHz CL = 15 p , RL = 50 W pF, VS = 1 VRMS, f = 100 kH kHz Room Room Room Room Room Room Room Room Room 15 85 55 25 1 5 5 16 90 dB 95 F pF pC 130 100 ns www.vishay.com S FaxBack 408-970-5600 4-2 Document Number: 70662 S-00787--Rev. F, 17-Apr-00 DG213 Vishay Siliconix SPECIFICATIONS Test Conditions Unless Otherwise Specified Parameter Power Supply Positive Supply Current Negative Supply Current Logic Supply Current Power Supply Range for Continuous Operation I+ VIN = 0 or 5 V I- IL VOP Room Full Room Full Room Full Full "3 -1 -5 1 5 "22 V 1 5 mA A D Suffix -40 to 85_C Symbol V+ = 15 V, V- = -15 V VL = 5 V, VIN = 2.4 V, 0.8 Ve Tempa Minc Typb Maxc Unit SPECIFICATIONS FOR UNIPOLAR SUPPLY Test Conditions Unless Otherwise Specified Parameter Analog Switch Analog Signal Ranged Drain-Source On-Resistance VANALOG rDS(on) VD = 3 V, 8 V, IS = 1 mA Full Room Full V- 90 V+ 110 140 V W D Suffix -40 to 85_C Symbol V+ = 12 V, V- = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Ve Tempa Minc Typb Maxc Unit Dynamic Characteristics Turn-On Time Turn-Off Time Break-Before-Make Time Delay Charge Injection tON See Figure 2 tOFF tD Q VS = 8 V, See Figure 3 CL = 1 nF, Vgen= 6 V, Rgen = 0 W Room Room Room 50 45 80 4 pC 100 ns Room 125 200 Power Supply Positive Supply Current Negative Supply Current Logic Supply Current Power Supply Range for Continuous Operation I+ VIN = 0 or 5 V I- IL VOP Room Full Room Full Room Full Full )3 -1 -5 1 5 )40 V 1 5 mA A Notes: a. Room = 25_C, Full = as determined by the operating temperature suffix. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guaranteed by design, not subject to production test. e. VIN = input voltage to perform proper function. Document Number: 70662 S-00787--Rev. F, 17-Apr-00 www.vishay.com S FaxBack 408-970-5600 4-3 DG213 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rDS(on) vs. VD and Power Supply Voltages 110 r DS(on) Drain-Source On-Resistance ( W ) - 100 90 80 70 60 50 40 30 20 10 -20 -16 -12 -8 -4 0 4 8 12 16 20 VD - Drain Voltage (V) "20 V "10 V "15 V "5 V r DS(on) Drain-Source On-Resistance ( W ) - 100 90 80 70 60 50 40 30 20 10 0 -15 125_C 85_C 25_C -55_C V+ = 15 V V- = -15 V rDS(on) vs. VD and Temperature -10 -5 0 5 10 15 VD - Drain Voltage (V) rDS(on) vs. VD and Single Power Supply Voltages 300 r DS(on) Drain-Source On-Resistance ( W ) - 5V 250 V- = 0 V VL = 5 V 40 30 20 200 I S,I D - Current (pA) 10 0 -10 -20 50 -30 0 0 2 4 6 8 10 12 -40 -20 Leakage Currents vs. Analog Voltage V+ = 22 V V- = -22 V TA = 25_C ID(on) 150 7V 10 V 12 V IS(off), ID(off) 100 -15 -10 -5 0 5 10 15 20 VD - Drain Voltage (V) VANALOG - Analog Voltage (V) Leakage Current vs. Temperature 1 nA V+ = 15 V V- = -15 V VS, VD = "14 V 30 QS, QD - Charge Injection vs. Analog Voltage 20 I S,I D - Current Q - Charge (pC) 100 pA 10 V+ = 15 V V- = -15 V V+ = 12 V V- = 0 V -10 0 IS(off), ID(off) 10 pA -20 1 pA -55 -35 -15 5 25 45 65 85 105 125 -30 -15 -10 -5 0 5 10 15 Temperature (_C) VANALOG - Analog Voltage (V) www.vishay.com S FaxBack 408-970-5600 4-4 Document Number: 70662 S-00787--Rev. F, 17-Apr-00 DG213 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Off Isolation vs. Frequency 120 110 100 90 OIRR (dB) RL = 50 W 80 70 60 50 40 10 k 100 k 1M 10 M V+ = +15 V V- = -15 V f - Frequency (Hz) SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ SX VL Level Shift/ Drive INX V- V+ DX GND V- FIGURE 1. TEST CIRCUITS +15 V V+ VS = +2 V S IN 3V GND V- RL 300 W CL 35 pF D VO Logic Input 3V 50% 0V tOFF 90% tr <20 ns tf <20 ns Switch Output -15 V VO = VS RL RL + rDS(on) VO tON FIGURE 2. Switching Time Document Number: 70662 S-00787--Rev. F, 17-Apr-00 www.vishay.com S FaxBack 408-970-5600 4-5 DG213 Vishay Siliconix TEST CIRCUITS +5 V +15 V Logic Input VL VS1 VS2 S1 IN1 S2 IN2 GND V- D2 VO2 Switch Output RL1 300 W RL2 300 W CL2 35 pF CL1 35 pF Switch Output 0V VS2 VO2 0V V+ D1 VO1 3V 50% 0V VS1 VO1 90% 90% tD tD -15 V CL (includes fixture and stray capacitance) FIGURE 3. Break-Before-Make C +15 V C VS V+ VS Rg = 50 W 0V, 2.4 V IN GND V- C RL NC 0V, 2.4 V C = RF bypass XTALK Isolation = 20 log VS VO S D VO Rg = 50 W IN1 0V, 2.4 V S2 S1 V+ +15 V D1 50 W D2 VO RL IN2 GND V- C Off Isolation = 20 log VS VO -15 V -15 V FIGURE 4. Off Isolation FIGURE 5. Channel-to-Channel Crosstalk +15 V V+ S IN 3V GND V- D VO CL 1000 pF INX ON VO DVO Rg Vg OFF ON DVO = measured voltage error due to charge injection The charge injection in coulombs is Q = CL x DVO -15 V FIGURE 6. Charge Injection www.vishay.com S FaxBack 408-970-5600 4-6 Document Number: 70662 S-00787--Rev. F, 17-Apr-00 DG213 Vishay Siliconix APPLICATIONS +15 V +5 V _15 V VIN1 VOUT CMOS Logic Input Select High = VIN1 Low = VIN2 VIN2 -15 V CMOS Logic Gain Select High = 10x Low = 1 x 10x 1x GND 20 kW 180 kW -15 V DG213 FIGURE 7. Low Power Non-Inverting Amplifier with Digitally Selectable Inputs and Gain Document Number: 70662 S-00787--Rev. F, 17-Apr-00 www.vishay.com S FaxBack 408-970-5600 4-7 |
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